N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

30 A

Maximum Drain Source Voltage:

30 V

Package Type:

PowerPAK 1212-8SH

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

5 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Minimum Gate Threshold Voltage:

1.1V

Maximum Power Dissipation:

39 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +20 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Length:

3.3mm

Width:

3.3mm

Typical Gate Charge @ Vgs:

34 nC @ 10 V

Height:

0.93mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.2V