The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
N-Channel MOSFET, 37 A, 650 V, 4-Pin TO-247-4 STWA75N65DM6
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STWA75N65DM6
Enrgtech Part No:
ET22788221
Warranty:
Manufacturer
£ 7.08
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
37 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247-4
Mounting Type:
Through Hole
Pin Count:
4
Number of Elements per Chip:
1
