Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK C3M0280090J
Manufacturer:
Wolfspeed
Manufacturer Part No:
C3M0280090J
Enrgtech Part No:
ET21509109
Warranty:
Manufacturer
£ 3.18
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
11 A
Maximum Drain Source Voltage:
900 V
Package Type:
TO-263-7
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
280 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Minimum Gate Threshold Voltage:
1.8V
Maximum Power Dissipation:
50 W
Transistor Configuration:
Single
