N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 SIR668DP-T1-RE3

Channel Type:

N

Maximum Continuous Drain Current:

65 A

Maximum Drain Source Voltage:

100 V

Package Type:

PowerPAK SO-8

Series:

TrenchFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

5.05 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

104 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Width:

5.26mm

Length:

6.25mm

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

72 nC @ 10 V

Forward Diode Voltage:

1.1V

Height:

1.12mm

Minimum Operating Temperature:

-55 °C