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ipb80n06s2l09atma2 N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L09ATMA2
ipb80n06s2l09atma2 N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L09ATMA2
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability. The product is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Infineon

N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L09ATMA2

Manufacturer:
Infineon
Manufacturer Part No:
IPB80N06S2L09ATMA2
Enrgtech Part No:
ET21606531
Warranty:
Manufacturer
£ 0.73

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Channel Type:

N

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

55 V

Series:

OptiMOS™

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.0082 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Number of Elements per Chip:

1

Transistor Material:

Si

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