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ipd50r650ceauma1 N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK Infineon IPD50R650CEAUMA1
ipd50r650ceauma1 N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK Infineon IPD50R650CEAUMA1
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
Infineon

N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD50R650CEAUMA1
Enrgtech Part No:
ET21606538
Warranty:
Manufacturer
£ 0.17

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Channel Type:

N

Maximum Continuous Drain Current:

9 A

Maximum Drain Source Voltage:

500 V

Series:

CoolMOS™ CE

Package Type:

TO-252

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.65 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Transistor Material:

Si

Number of Elements per Chip:

1

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