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ipg20n10s4l35aatma1 Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Infineon IPG20N10S4L35AATMA1
ipg20n10s4l35aatma1 Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Infineon IPG20N10S4L35AATMA1
The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩReducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging. Dual N-channel Logic Level - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Feasible for automatic optical inspection (AOI)
Infineon

Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 IPG20N10S4L35AATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPG20N10S4L35AATMA1
Enrgtech Part No:
ET21626905
Warranty:
Manufacturer
£ 0.33

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Channel Type:

N

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

100 V

Package Type:

SuperSO8 5 x 6

Series:

OptiMOS™

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.035 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

16V

Number of Elements per Chip:

2

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