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ipd50p04p413atma1 P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P413ATMA1
ipd50p04p413atma1 P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P413ATMA1
ipd50p04p413atma1 P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK Infineon IPD50P04P413ATMA1
Infineon OptiMOS™P P-Channel Power MOSFETs The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Infineon

P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD50P04P413ATMA1
Enrgtech Part No:
ET16793219
Warranty:
Manufacturer
£ 0.26

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Channel Type:

P

Maximum Continuous Drain Current:

50 A

Maximum Drain Source Voltage:

40 V

Package Type:

DPAK (TO-252)

Series:

OptiMOS P

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

12.6 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

58 W

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