

The Infineon's CoolMOS C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
650V voltage
Revolutionary Best-in-Class RDS (on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and Solar Inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Revolutionary Best-in-Class RDS (on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and Solar Inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density

N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK IPD65R225C7ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPD65R225C7ATMA1
Enrgtech Part No:
ET24128486
Warranty:
Manufacturer
£ 0.59
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Channel Type:
N
Maximum Continuous Drain Current:
11 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-252
Mounting Type:
Surface Mount
Pin Count:
3
Number of Elements per Chip:
1