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bsc028n06nstatma1 Dual N-Channel MOSFET Transistor & Diode, 137 A, 60 V, 8-Pin SuperSO8 5 x 6 Infineon BSC028N06NSTATMA1
bsc028n06nstatma1 Dual N-Channel MOSFET Transistor & Diode, 137 A, 60 V, 8-Pin SuperSO8 5 x 6 Infineon BSC028N06NSTATMA1
The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server. Low RDS(on)
Optimized for synchronous rectification
Enhanced 175°C capability in SuperSO8
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness
Infineon

Dual N-Channel MOSFET Transistor & Diode, 137 A, 60 V, 8-Pin SuperSO8 5 x 6 BSC028N06NSTATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSC028N06NSTATMA1
Enrgtech Part No:
ET21626872
Warranty:
Manufacturer
£ 0.66

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Channel Type:

N

Maximum Continuous Drain Current:

137 A

Maximum Drain Source Voltage:

60 V

Package Type:

SuperSO8 5 x 6

Series:

OptiMOS™

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.0028 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.3V

Number of Elements per Chip:

2

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