The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance
SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V
Manufacturer:
STMicroelectronicsManufacturer Part No:
SCTW35N65G2V
Enrgtech Part No:
ET19616694
Warranty:
Manufacturer
£ 9.90
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
45 A
Maximum Drain Source Voltage:
650 V
Package Type:
HiP247
Series:
SCTW35
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.045 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Transistor Material:
SiC
Number of Elements per Chip:
1
