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ipb019n08n3gatma1 N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin D2PAK Infineon IPB019N08N3GATMA1
ipb019n08n3gatma1 N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin D2PAK Infineon IPB019N08N3GATMA1
The Infineon OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Optimized technology for DC-DC converters
Excellent gate charge x R DS(ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile (<0,7mm)
N-channel, normal level
Infineon

N-Channel MOSFET Transistor & Diode, 180 A, 80 V, 3-Pin D2PAK IPB019N08N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB019N08N3GATMA1
Enrgtech Part No:
ET21626883
Warranty:
Manufacturer
£ 1.65

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Channel Type:

N

Maximum Continuous Drain Current:

180 A

Maximum Drain Source Voltage:

80 V

Package Type:

D2PAK (TO-263)

Series:

OptiMOS™ 3

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.0019 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Number of Elements per Chip:

1

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