P-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSS83PH6327XTSA1

Channel Type:

P

Maximum Continuous Drain Current:

330 mA

Maximum Drain Source Voltage:

60 V

Series:

SIPMOS®

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

3 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

360 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Length:

2.9mm

Width:

1.3mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

2.38 nC @ 10 V

Number of Elements per Chip:

1

Height:

1mm

Minimum Operating Temperature:

-55 °C