The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 475A. It is in Stoll package features very low RDS(on) of 0.60mOhm. It has the advantages of Infineon’s well known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, battery protection and battery formation.
Optimized for low voltage motor drives application
Optimized for battery power applications
Very low on-resistance RDS(on)
100% avalanche tested
Superior thermal performance
N-channel
Optimized for battery power applications
Very low on-resistance RDS(on)
100% avalanche tested
Superior thermal performance
N-channel
Silicon N-Channel MOSFET Transistor, 475 A, 40 V, 5-Pin HSOF-5 IST006N04NM6AUMA1
Manufacturer:
Infineon
Manufacturer Part No:
IST006N04NM6AUMA1
Enrgtech Part No:
ET22542986
Warranty:
Manufacturer
£ 1.03
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Channel Type:
N
Maximum Continuous Drain Current:
475 A
Maximum Drain Source Voltage:
40 V
Package Type:
HSOF-5
Mounting Type:
Surface Mount
Pin Count:
5
Maximum Drain Source Resistance:
0.0006 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.3V
Number of Elements per Chip:
1
Transistor Material:
Silicon
