The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
AEC Q101 qualified
Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R190C7ATMA2
Manufacturer:
Infineon
Manufacturer Part No:
IPB65R190C7ATMA2
Enrgtech Part No:
ET21632798
Warranty:
Manufacturer
£ 1.07
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
31.2 A
Maximum Drain Source Voltage:
650 V
Series:
CoolMOS™
Package Type:
TO 263
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.11 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Transistor Material:
Silicon
Number of Elements per Chip:
1
