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sihk105n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK105N60EF-T1GE3
sihk105n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK105N60EF-T1GE3
sihk105n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK105N60EF-T1GE3
sihk105n60ef-t1ge3 Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK105N60EF-T1GE3
The Vishay power MOSFET with fast body diode and 4th generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies, and telecom power supplies. Low effective capacitance
Avalanche energy rated
Low figure of merit
Vishay

Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHK105N60EF-T1GE3
Enrgtech Part No:
ET26056162
Warranty:
Manufacturer
£ 1.97

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Channel Type:

N

Maximum Continuous Drain Current:

24 A

Maximum Drain Source Voltage:

650 V

Package Type:

PowerPAK 10 x 12

Mounting Type:

PCB Mount

Pin Count:

8

Channel Mode:

Enhancement

Transistor Material:

Silicon

Number of Elements per Chip:

2

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