The Infineon CoolSiC 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
N-Channel MOSFET, 26 A, 1200 V, 4-Pin TO-247-4 IMZ120R090M1HXKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IMZ120R090M1HXKSA1
Enrgtech Part No:
ET21632900
Warranty:
Manufacturer
£ 2.94
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
26 A
Maximum Drain Source Voltage:
1200 V
Series:
IMZ1
Package Type:
TO-247-4
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
90 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Transistor Material:
Si
Number of Elements per Chip:
1
