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ipb60r099c7atma1 N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C7ATMA1
ipb60r099c7atma1 N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C7ATMA1
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Infineon

N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK IPB60R099C7ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB60R099C7ATMA1
Enrgtech Part No:
ET21632912
Warranty:
Manufacturer
£ 1.41

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Channel Type:

N

Maximum Continuous Drain Current:

22 A

Maximum Drain Source Voltage:

600 V

Package Type:

D2PAK (TO-263)

Series:

CoolMOS™ C7

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

99 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Transistor Material:

Si

Number of Elements per Chip:

1

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