

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode

N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK IPB60R099C7ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB60R099C7ATMA1
Enrgtech Part No:
ET21632912
Warranty:
Manufacturer
£ 1.41
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
22 A
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Series:
CoolMOS™ C7
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
99 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Si
Number of Elements per Chip:
1