N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1

Channel Type:

N

Maximum Continuous Drain Current:

120 A

Maximum Drain Source Voltage:

120 V

Series:

OptiMOS™ 3

Package Type:

TO-220

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

4.1 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

300 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

4.57mm

Typical Gate Charge @ Vgs:

158 nC

Length:

10.36mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C

Height:

15.95mm