Infineon HEXFET N-Channel MOSFET, 2.6 A, 150 V, 3-Pin SOT-223 IRFL4315TRPBF

Infineon HEXFET N-Channel MOSFET, 2.6 A, 150 V, 3-Pin SOT-223 IRFL4315TRPBF

Manufacturer:
Manufacturer Part No:
IRFL4315TRPBF
Enrgtech Part No:
ET16897602
Warranty:
Manufacturer
£ 0.4400
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Channel Type:
N
Maximum Continuous Drain Current:
2.6 A
Maximum Drain Source Voltage:
150 V
Package Type:
SOT-223
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
185 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Minimum Gate Threshold Voltage:
3V
Maximum Power Dissipation:
2.8 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-30 V, +30 V
Width:
3.7mm
Transistor Material:
Si
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Length:
6.7mm
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Height:
1.8mm
Forward Diode Voltage:
1.5V
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0900766b813ab0e3.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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