The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching and high speed switching applications.
Storage temperature range −55 to 150 °C
Silicon N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 SSM3K329R,LF(T
Manufacturer:
Toshiba
Manufacturer Part No:
SSM3K329R,LF(T
Enrgtech Part No:
ET22733104
Warranty:
Manufacturer
£ 0.05
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Channel Type:
N
Maximum Continuous Drain Current:
3.5 A
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
2.89e+008 Ω
Maximum Gate Threshold Voltage:
1V
Transistor Material:
Silicon
Number of Elements per Chip:
1
