Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 PMGD290XN,115

Channel Type:

N

Maximum Continuous Drain Current:

860 mA

Maximum Drain Source Voltage:

20 V

Package Type:

SOT-363

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

350 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.5V

Minimum Gate Threshold Voltage:

0.5V

Maximum Power Dissipation:

410 mW

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-12 V, +12 V

Number of Elements per Chip:

2

Length:

2.2mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

0.72 nC @ 4.5 V

Maximum Operating Temperature:

+150 °C

Width:

1.35mm

Minimum Operating Temperature:

-55 °C

Height:

1mm