The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
N-Channel MOSFET, 54 A, 650 V, 7-Pin D2PAK IMBG65R039M1HXTMA1
Manufacturer:
Infineon
Manufacturer Part No:
IMBG65R039M1HXTMA1
Enrgtech Part No:
ET24141552
Warranty:
Manufacturer
£ 8.95
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
54 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-263-7
Mounting Type:
Surface Mount
Pin Count:
7
Number of Elements per Chip:
1
