The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A
Maximum power dissipation is 360 mW
Maximum power dissipation is 360 mW
N-Channel MOSFET, 680 mA, 100 V, 3-Pin SOT-223 BSP316PH6327XTSA1
Manufacturer:
Infineon
Manufacturer Part No:
BSP316PH6327XTSA1
Enrgtech Part No:
ET24144159
Warranty:
Manufacturer
£ 0.14
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Channel Type:
N
Maximum Continuous Drain Current:
680 mA
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-223
Mounting Type:
Surface Mount
Pin Count:
3
Number of Elements per Chip:
1
