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sij4108dp-t1-ge3 Silicon N-Channel MOSFET, 56.7 A, 100 V, 7-Pin SO-8L Vishay SIJ4108DP-T1-GE3
sij4108dp-t1-ge3 Silicon N-Channel MOSFET, 56.7 A, 100 V, 7-Pin SO-8L Vishay SIJ4108DP-T1-GE3
sij4108dp-t1-ge3 Silicon N-Channel MOSFET, 56.7 A, 100 V, 7-Pin SO-8L Vishay SIJ4108DP-T1-GE3
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon. TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Vishay

Silicon N-Channel MOSFET, 56.7 A, 100 V, 7-Pin SO-8L SIJ4108DP-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIJ4108DP-T1-GE3
Enrgtech Part No:
ET24597582
Warranty:
Manufacturer
£ 0.57

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Channel Type:

N

Maximum Continuous Drain Current:

56.7 A

Maximum Drain Source Voltage:

100 V

Package Type:

SO-8L

Mounting Type:

Surface Mount

Pin Count:

7

Channel Mode:

Enhancement

Transistor Material:

Silicon

Number of Elements per Chip:

1

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