N-Channel MOSFET, 9.3 A, 80 V, 8-Pin SOIC IRF7493TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

9.3 A

Maximum Drain Source Voltage:

80 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

15 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Width:

4mm

Length:

5mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

35 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.3V

Height:

1.5mm