The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.
Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
Manufacturer:
Infineon
Manufacturer Part No:
IGP50N60TXKSA1
Enrgtech Part No:
ET16792956
Warranty:
Manufacturer
£ 1.29
Checking for live stock
Maximum Continuous Collector Current:
90 A
Maximum Collector Emitter Voltage:
600 V
Maximum Gate Emitter Voltage:
±20V
Number of Transistors:
3
Maximum Power Dissipation:
333 W
Package Type:
PG-TO220-3
