The Infineon schottky barrier diode has ultra low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C.
Industrial Power Supplies
Industrial SMPS
Industrial UPS
Energy Generation
Solar String Inverter
Energy Distribution
Energy Storage
Infrastructure Charge
Charger
Industrial SMPS
Industrial UPS
Energy Generation
Solar String Inverter
Energy Distribution
Energy Storage
Infrastructure Charge
Charger
IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3
Manufacturer:
Infineon
Manufacturer Part No:
IKW40N65RH5XKSA1
Enrgtech Part No:
ET24143473
Warranty:
Manufacturer
£ 3.86
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Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
15V
Maximum Power Dissipation:
250 W
Number of Transistors:
2
Package Type:
PG-TO247-3
Configuration:
Single
