N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

Channel Type:

N

Maximum Continuous Drain Current:

130 A

Maximum Drain Source Voltage:

200 V

Package Type:

TO-247AC

Series:

HEXFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

10 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

520 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Number of Elements per Chip:

1

Transistor Material:

Si

Length:

15.87mm

Width:

5.31mm

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

161 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

20.7mm