P-Channel MOSFET, 31 A, 55 V, 3-Pin IPAK IRFU5305PBF

Channel Type:

P

Maximum Continuous Drain Current:

31 A

Maximum Drain Source Voltage:

55 V

Package Type:

IPAK (TO-251)

Series:

HEXFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

65 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

110 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

63 nC @ 10 V

Width:

2.3mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Transistor Material:

Si

Length:

6.6mm

Minimum Operating Temperature:

-55 °C

Height:

6.1mm

Forward Diode Voltage:

1.3V