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sidr626ep-t1-re3 Dual Silicon N-Channel MOSFET, 227 A, 60 V, 8-Pin PowerPAK SO-8DC Vishay SIDR626EP-T1-RE3
sidr626ep-t1-re3 Dual Silicon N-Channel MOSFET, 227 A, 60 V, 8-Pin PowerPAK SO-8DC Vishay SIDR626EP-T1-RE3
sidr626ep-t1-re3 Dual Silicon N-Channel MOSFET, 227 A, 60 V, 8-Pin PowerPAK SO-8DC Vishay SIDR626EP-T1-RE3
sidr626ep-t1-re3 Dual Silicon N-Channel MOSFET, 227 A, 60 V, 8-Pin PowerPAK SO-8DC Vishay SIDR626EP-T1-RE3
The Vishay N channel TrenchFET generation 4 power MOSFET has top side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch. Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
Vishay

Dual Silicon N-Channel MOSFET, 227 A, 60 V, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3

Manufacturer:
Vishay
Manufacturer Part No:
SIDR626EP-T1-RE3
Enrgtech Part No:
ET26056151
Warranty:
Manufacturer
£ 0.95

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Channel Type:

N

Maximum Continuous Drain Current:

227 A

Maximum Drain Source Voltage:

60 V

Package Type:

PowerPAK SO-8DC

Mounting Type:

Surface Mount

Pin Count:

8

Channel Mode:

Enhancement

Transistor Material:

Silicon

Number of Elements per Chip:

2

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