N-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 IRLML2060TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

1.2 A

Maximum Drain Source Voltage:

60 V

Series:

HEXFET

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

480 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.5V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

1.25 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Width:

1.4mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

0.67 nC @ 4.5 V

Length:

3.04mm

Minimum Operating Temperature:

-55 °C

Height:

1.02mm