Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-4L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra low gate charge 74 nC
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm
N-Channel MOSFET, 47 A, 650 V, 4-Pin TO-247-4L NTH4L060N065SC1
Manufacturer:
onsemi
Manufacturer Part No:
NTH4L060N065SC1
Enrgtech Part No:
ET23425031
Warranty:
Manufacturer
£ 4.30
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
47 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247-4L
Mounting Type:
Through Hole
Pin Count:
4
