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si4190bdy-t1-ge3 Silicon N-Channel MOSFET, 17 A, 100 V, 8-Pin SO-8 Vishay SI4190BDY-T1-GE3
si4190bdy-t1-ge3 Silicon N-Channel MOSFET, 17 A, 100 V, 8-Pin SO-8 Vishay SI4190BDY-T1-GE3
si4190bdy-t1-ge3 Silicon N-Channel MOSFET, 17 A, 100 V, 8-Pin SO-8 Vishay SI4190BDY-T1-GE3
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon. TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Vishay

Silicon N-Channel MOSFET, 17 A, 100 V, 8-Pin SO-8 SI4190BDY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4190BDY-T1-GE3
Enrgtech Part No:
ET25158195
Warranty:
Manufacturer
£ 0.72

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Channel Type:

N

Maximum Continuous Drain Current:

17 A

Maximum Drain Source Voltage:

100 V

Package Type:

SO-8

Mounting Type:

Surface Mount

Pin Count:

8

Channel Mode:

Enhancement

Transistor Material:

Silicon

Number of Elements per Chip:

1

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