P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP170PH6327XTSA1

Channel Type:

P

Maximum Continuous Drain Current:

1.9 A

Maximum Drain Source Voltage:

60 V

Package Type:

SOT-223

Series:

SIPMOS®

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

300 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2.1V

Maximum Power Dissipation:

1.8 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

3.5mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

10 nC @ 10 V

Length:

6.5mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Height:

1.6mm

Minimum Operating Temperature:

-55 °C