N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NTRPBF

Channel Type:

N

Maximum Continuous Drain Current:

2.8 A

Maximum Drain Source Voltage:

55 V

Series:

HEXFET

Package Type:

SOT-223

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

280 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2.1 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Length:

6.7mm

Number of Elements per Chip:

1

Transistor Material:

Si

Width:

3.7mm

Maximum Operating Temperature:

+150 °C

Typical Gate Charge @ Vgs:

9.5 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

1.739mm