The Infineon P-Channel MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Dual P-Channel MOSFET Transistor & Diode, 5.6 A, 20 V, 2-Pin D2PAK IRLMS6802TRPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRLMS6802TRPBF
Enrgtech Part No:
ET21626940
Warranty:
Manufacturer
£ 0.10
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Channel Type:
P
Maximum Continuous Drain Current:
5.6 A
Maximum Drain Source Voltage:
20 V
Package Type:
D2PAK (TO-263)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
2
Maximum Drain Source Resistance:
0.05 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
12V
Number of Elements per Chip:
2
