N-Channel MOSFET, 11 A, 600 V, 3-Pin DPAK STD13NM60ND

Channel Type:

N

Maximum Continuous Drain Current:

11 A

Maximum Drain Source Voltage:

600 V

Series:

FDmesh

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

380 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

109 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-25 V, +25 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

24.5 nC @ 10 V

Length:

6.6mm

Width:

6.2mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

2.4mm