Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET NTHD4102PT1G

Channel Type:

P

Maximum Continuous Drain Current:

4.1 A

Maximum Drain Source Voltage:

20 V

Package Type:

ChipFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

170 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.5V

Maximum Power Dissipation:

2.1 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-8 V, +8 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Length:

3.1mm

Width:

1.7mm

Typical Gate Charge @ Vgs:

7.6 nC @ 4.5 V

Number of Elements per Chip:

2

Height:

1.1mm

Minimum Operating Temperature:

-55 °C