

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard surface-mount power package
Capable of being wave-soldered
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard surface-mount power package
Capable of being wave-soldered

Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFR1010ZTRPBF
Enrgtech Part No:
ET21626935
Warranty:
Manufacturer
£ 0.37
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
42 A
Maximum Drain Source Voltage:
55 V
Series:
HEXFET
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0075 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
20V
Number of Elements per Chip:
2