N-Channel MOSFET, 35 A, 55 V, 3-Pin TO-220AB HUF75321P3

Channel Type:

N

Maximum Continuous Drain Current:

35 A

Maximum Drain Source Voltage:

55 V

Package Type:

TO-220AB

Series:

UltraFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

34 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

93 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Number of Elements per Chip:

1

Length:

10.67mm

Width:

4.7mm

Typical Gate Charge @ Vgs:

36 nC @ 20 V

Maximum Operating Temperature:

+175 °C

Minimum Operating Temperature:

-55 °C

Height:

16.3mm