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Channel Type:
N
Maximum Continuous Drain Current:
18 A
Maximum Drain Source Voltage:
150 V
Series:
HEXFET
Package Type:
DirectFET ISOMETRIC
Mounting Type:
Surface Mount
Maximum Drain Source Resistance:
0.056 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Number of Elements per Chip:
1
Transistor Material:
Si