Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3

Channel Type:

N, P

Maximum Continuous Drain Current:

190 mA, 300 mA

Maximum Drain Source Voltage:

60 V

Package Type:

SC-89-6

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

3 Ω, 8 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

250 mW

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Width:

1.7mm

Number of Elements per Chip:

2

Typical Gate Charge @ Vgs:

1700 nC @ 15 V, 750 nC @ 4.5 V

Length:

1.7mm

Minimum Operating Temperature:

-55 °C

Height:

0.6mm