The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely dv/dt ruggedness
Zener-protected
Fast-recovery body diode
Lower RDS(on) x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely dv/dt ruggedness
Zener-protected
N-Channel MOSFET, 37 A, 650 V, 4-Pin TO-247-4 STWA32N65DM6AG
Manufacturer:
STMicroelectronicsManufacturer Part No:
STWA32N65DM6AG
Enrgtech Part No:
ET23140068
Warranty:
Manufacturer
£ 10.59
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
37 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247-4
Mounting Type:
Through Hole
Pin Count:
4
Number of Elements per Chip:
1
