N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-247 IPW60R190C6FKSA1

Channel Type:

N

Maximum Continuous Drain Current:

20.2 A

Maximum Drain Source Voltage:

650 V

Series:

CoolMOS™ C6

Package Type:

TO-247

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

190 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

151 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

16.13mm

Transistor Material:

Si

Width:

5.21mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

63 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

21.1mm