The Infineon OptiMOS™ 5 100V power MOSFET. It is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications.
Very low on-resistance RDS(on)
N-channel, normal level
100% avalanche tested
Pb-free plating
N-channel, normal level
100% avalanche tested
Pb-free plating
N-Channel MOSFET, 166 A, 100 V, 3-Pin D2PAK IPB027N10N5ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB027N10N5ATMA1
Enrgtech Part No:
ET21617591
Warranty:
Manufacturer
£ 1.38
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Channel Type:
N
Maximum Continuous Drain Current:
166 A
Maximum Drain Source Voltage:
100 V
Series:
OptiMOS™ 5
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0027 Ω
Maximum Gate Threshold Voltage:
3.8V
Transistor Material:
Si
Number of Elements per Chip:
1
