N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

52 A

Maximum Drain Source Voltage:

60 V

Package Type:

PowerPAK 1212-8

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

11 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.5V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

39 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±20 V

Length:

3.15mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Width:

3.15mm

Typical Gate Charge @ Vgs:

19.8 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

1.07mm

Forward Diode Voltage:

1.1V