The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R055CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations
N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB60R055CFD7ATMA1
Enrgtech Part No:
ET21632910
Warranty:
Manufacturer
£ 1.96
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
38 A
Maximum Drain Source Voltage:
600 V
Package Type:
D2PAK (TO-263)
Series:
CoolMOS™
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
55 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Transistor Material:
Si
Number of Elements per Chip:
1
