Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK NTBG160N120SC1
Manufacturer:
onsemi
Manufacturer Part No:
NTBG160N120SC1
Enrgtech Part No:
ET20033315
Warranty:
Manufacturer
£ 3.12
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
19.5 A
Maximum Drain Source Voltage:
1200 V
Series:
NTB
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
225 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.3V
Transistor Material:
Si
Number of Elements per Chip:
1
