N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK Infineon IRF3205ZLPBF | IRF3205ZLPBF | ET21605546

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche It is lead-free

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N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK IRF3205ZLPBF

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