This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
It is lead-free
N-Channel MOSFET, 110 A, 55 V, 3-Pin I2PAK IRF3205ZLPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRF3205ZLPBF
Enrgtech Part No:
ET21605546
Warranty:
Manufacturer
£ 0.46
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Channel Type:
N
Maximum Continuous Drain Current:
110 A
Maximum Drain Source Voltage:
55 V
Package Type:
I2PAK (TO-262)
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.0065 Ω
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
